Electronic states of semiconductor/metal/semiconductor quantum well structures

This publication has 10 references indexed in Scilit:

• New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
  Applied Physics Letters, 1987
• Motionally Dependent Bound States in Semiconductor Quantum Wells
  Physical Review Letters, 1986
• Growth of strained-layer semiconductor-metal-semiconductor heterostructures
  Applied Physics Letters, 1986
• Transistor action in Si/CoSi2/Si heterostructures
  Applied Physics Letters, 1985
• First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well
  Applied Physics Letters, 1985
• Transistor effect in monolithic Si/CoSi ₂ /Si epitaxial structures
  Electronics Letters, 1984
• Silicon/metal silicide heterostructures grown by molecular beam epitaxy
  Applied Physics Letters, 1980
• Double heteroepitaxy in the Si (111)/CoSi2/Si structure
  Applied Physics Letters, 1980
• Quantum States of Confined Carriers in Very Thin ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$-GaAs-${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ Heterostructures
  Physical Review Letters, 1974
• Tunneling in a finite superlattice
  Applied Physics Letters, 1973