Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

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Abstract
Lanthanum aluminate ( LaAlO 3 ) films were deposited on Si(100) substrates by a molecular beamdeposition method with an electron beam gun and annealed typically in N 2 atmosphere at 800 ° C for 1 min. Reflection high-energy electron diffraction observation as well as x-ray diffraction analysis showed that the crystalline quality of the LaAlO 3 films was amorphous, even after annealing at 800 ° C . It was also found from x-ray fluorescence measurements that the ratio of La-to-Al for LaAlO 3 films was almost 1:1. The dielectric constant of LaAlO 3 films was estimated to be 20–25 and the leakage current density was improved by about eight orders of magnitude in maximum after the annealing process.