Theory of bistability in two-segment diode lasers
- 1 August 1985
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 10 (8) , 399-401
- https://doi.org/10.1364/ol.10.000399
Abstract
Optical bistability in two-segment diode lasers with inhomogeneous injection is considered. Analytical solution of the rate-equation model gives a simple bistability condition. Slower carrier recombination in the absorber relative to the gain region is required for bistability when the gain and the absorber optical cross sections are equal. Carrier lifetimes, switch-on and switch-off powers, and currents are investigated for these bistable lasers.Keywords
This publication has 15 references indexed in Scilit:
- Bistability and pulsations in semiconductor lasers with inhomogeneous current injectionIEEE Journal of Quantum Electronics, 1982
- Interaction of a bistable injection laser with an external optical cavityApplied Physics Letters, 1982
- Bistability and negative resistance in semiconductor lasersApplied Physics Letters, 1982
- Bistability and pulsations in cw semiconductor lasers with a controlled amount of saturable absorptionApplied Physics Letters, 1981
- Double-heterojunction laser diodes with multiply segmented contactsApplied Physics Letters, 1981
- Bistable operation in semiconductor lasers with inhomogeneous excitationElectronics Letters, 1981
- Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasersJournal of Applied Physics, 1980
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976
- GaAs Injection Laser with Novel Mode Control and Switching PropertiesJournal of Applied Physics, 1965
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964