Impact ionisation and noise in SiGe multiquantumwell structures
- 15 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (17) , 1616-1618
- https://doi.org/10.1049/el:19961035
Abstract
A modified Keldysh form is proposed for ionisation scattering rates in strained SiGe layers. These rates are incorporated into a hot-carrier calculation to study avalanche noise in SiGe MQW structures. It is found that carrier heating is controlled by the thick Si layers and a pulsing of the ionisation in the SiGe layers acts to reduce the excess noise.Keywords
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