Impact ionisation in Si bipolar devices
- 2 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (5) , 334-335
- https://doi.org/10.1049/el:19950257
Abstract
A new theory of impact ionisation recently developed by the author is applied to breakdown in Si pin diodes and collectors of advanced bipolar transistors. Nonlocal aspects dominate the ionisation on short length scales, and good agreement is achieved between the theory and published breakdown and multiplication data.Keywords
This publication has 5 references indexed in Scilit:
- Breakdown voltage in ultra-thin pin diodesSemiconductor Science and Technology, 1993
- Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT'sIEEE Electron Device Letters, 1993
- Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technologyIEEE Electron Device Letters, 1990
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967