Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (7) , 288-290
- https://doi.org/10.1109/55.56477
Abstract
In the device a SiGe epitaxial base is integrated in a structure which uses in situ doped epitaxial lateral overgrowth for the formation of the emitter window and the extrinsic base contact. Nearly ideal I-V characteristics have been achieved for a base width of 60 nm with an intrinsic base resistance of 4.6 k Omega / Square Operator and for emitter widths down to 0.4 mu m. A DC collector current enhancement factor of 3.1 was obtained relative to a Si homojunction transistor with a 1.25 times higher intrinsic base resistance. The breakdown voltage BV/sub CBO/ is identical for both Si and SiGe devices, even though the collector-base depletion region is partly overlapped with the reduced-bandgap SiGe strained layer. The lower BV/sub CEO/, measured for the SiGe-base transistor, is due to the higher current gain. Based on these results the fabrication of high-speed bipolar circuits that take advantage of SiGe-base bandgap engineering seems possible using selective epitaxy emitter window (SEEW) technology.Keywords
This publication has 8 references indexed in Scilit:
- Self-aligned bipolar npn transistor with 60 nm epitaxial basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Graded-SiGe-base, poly-emitter heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processingIEEE Electron Device Letters, 1989
- A new effect at high currents in heterostructure bipolar transistorsIEEE Electron Device Letters, 1988
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982