Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's
- 1 February 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (2) , 69-71
- https://doi.org/10.1109/55.215111
Abstract
Measurements of the impact-ionization multiplication coefficient M-1 in advanced Si BJTs up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9*10/sup 5/ V/cm) are presented. The intrinsic limitations affecting M-1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M-1 measurements is pointed out. An accurate theoretical prediction of the M-1 coefficient on collector-base voltages close to BV/sub CBO/ requires that the contribution of holes to impact ionization be properly accounted for.Keywords
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