Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 23-26
- https://doi.org/10.1016/0167-9317(91)90175-d
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Hot-electron-induced minority-carrier generation in bipolar junction transistorsIEEE Electron Device Letters, 1990
- Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriersIEEE Electron Device Letters, 1990
- Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Density of gap states of silicon grain boundaries determined by optical absorptionApplied Physics Letters, 1983