Electronic properties and far infrared spectroscopy of InAs/AlSb quantum wells

This publication has 10 references indexed in Scilit:

• Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
  Journal of Applied Physics, 1990
• Reduction of the electron density in GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As single heterojunctions by continuous photoexcitation
  Physical Review B, 1989
• Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
  Journal of Applied Physics, 1989
• Interaction of optical phonons with electrons in an InAs quantum well
  Physical Review B, 1987
• Cyclotron-resonance oscillations in InAs quantum wells
  Physical Review B, 1986
• Electron densities in InAs–AlSb quantum wells
  Journal of Vacuum Science & Technology B, 1984
• Polaron effective mass in GaAs heterostructure
  Physical Review B, 1983
• Self-consistent theory of screening in a two dimensional electron gas under strong magnetic field
  Solid State Communications, 1980
• Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
  Physical Review Letters, 1977
• Band structure of indium antimonide
  Journal of Physics and Chemistry of Solids, 1957