Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures
- 19 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2510-2512
- https://doi.org/10.1063/1.100409
Abstract
Electron effective mass in the InxGa1−xAs conduction channel of strained AlGaAs/InGaAs/GaAs pseudomorphic structures is measured using far‐infrared cyclotron resonance techniques at 4.2 K. The measured cyclotron mass is heavier than the conduction‐band‐edge mass in bulk InxGa1−xAs. This result is explained by the large two‐dimensional electron density realized in the structure, and the lattice strain that exists in the InxGa1−xAs layer.Keywords
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