Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopy
- 30 September 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (9) , 747-751
- https://doi.org/10.1016/0038-1098(83)90648-8
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- A study of the initial oxidation of polycrystalline Si using surface analysis techniquesJournal of Vacuum Science and Technology, 1981
- Evidence for the segregation of impurities to grain boundaries in multigrained silicon using Auger electron spectroscopy and secondary ion mass spectroscopyApplied Physics Letters, 1980
- Si-SiO2 interface characterization from angular dependence of x-ray photoelectron spectraApplied Physics Letters, 1980
- Summary Abstract: Intermediate oxidation state of Si(111): Core photoelectron absorption versus chemical shiftsJournal of Vacuum Science and Technology, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiInterfacePhysical Review Letters, 1978
- New Phenomenon in the Absorption of Oxygen on SiliconPhysical Review Letters, 1978
- Interface Phenomena in Solar Cells and Solar Cell Development ProcessesPublished by American Chemical Society (ACS) ,1976
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973