Piezoelectric Quantization in GaInN thin Films and Multiple Quantum Well Structures
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Nitride Semiconductorsphysica status solidi (c), 2014
- Polarization-Based Calculation of the Dielectric Tensor of Polar CrystalsPhysical Review Letters, 1997
- Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistorsApplied Physics Letters, 1997
- Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well StructureMRS Proceedings, 1996
- Survey of Semiconductor PhysicsPublished by Springer Nature ,1990
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Electric Field Effects on the Dielectric Constant of SolidsPhysical Review B, 1967