Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Lattice parameters of gallium nitrideApplied Physics Letters, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well DeviceJapanese Journal of Applied Physics, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- InGaN/AlGaN blue-light-emitting diodesJournal of Vacuum Science & Technology A, 1995
- New Approach in Equilibrium Theory for Strained Layer RelaxationPhysical Review Letters, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics, 1992
- A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBEMRS Proceedings, 1992
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987