Fir photoconductivity in epitaxial InP
- 1 November 1983
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 23 (6) , 311-319
- https://doi.org/10.1016/0020-0891(83)90004-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Shallow donor states in high purity GaAs in magnetic fieldSolid State Communications, 1971
- The optical frequencies and dielectric constants of InPSolid State Communications, 1969
- MICROWAVE PERMITTIVITY OF THE GaAs LATTICE AT TEMPERATURES BETWEEN 100°K AND 600°KApplied Physics Letters, 1968
- FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GaAsApplied Physics Letters, 1968
- CXLIII. On conduction in impurity bandsJournal of Computers in Education, 1953