Observation of quantum size effect in the resistivity of thin, gray tin epilayers
- 25 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (13) , 1327-1329
- https://doi.org/10.1063/1.101645
Abstract
Thin, gray tin films, with thicknesses from 50 to 375 Å, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness‐dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.Keywords
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