Residual disorder in Si from oxygen recoils in annealed ``through-oxide'' arsenic implants
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (5) , 297-299
- https://doi.org/10.1063/1.1655480
Abstract
Channeling effect measurements were used to evaluate the residual damage in Si after 1000 °C anneal for high‐dose (5×1015−2×1016 cm−2) As implantations through oxide layers. For these implantations the amount of damage after anneal increases with As dose and oxide thickness. This residual damage effect was simulated by oxygen implants into Si. We conclude that oxygen recoils are responsible for the disorder found in through‐oxide implants and for defects found at the periphery of oxide cuts used as implantations masks.Keywords
This publication has 5 references indexed in Scilit:
- Stoichiometry of thin silicon oxide layers on siliconApplied Physics Letters, 1974
- Defects in arsenic-implanted p-n junctionsApplied Physics Letters, 1973
- Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantationsApplied Physics Letters, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970