The thermal conductivity of germanium, silicon and indium arsenide from 40°C to 425°C

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Abstract
Measurements have been made of the thermal conductivity of germanium, silicon, pure (n = 3 × 1016) indium arsenide and impure (n = 1019) indium arsenide. In each case the electronic contribution K e to thermal conductivity has been calculated and the phonon contribution K L estimated by subtraction of K e from the experimental values. The thermal resistance of the lattice has not generally been found to be proportional to the absolute temperature as expected for three-phonon processes but the trend is towards a higher power relationship. The lattice resistance of heavily doped indium arsenide has been found to be greater than that of the pure material.

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