Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of long wave-length infrared (LWIR) detectors
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 439-442
- https://doi.org/10.1016/0167-9317(92)90470-c
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arraysIEEE Electron Device Letters, 1991
- A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layersSolid-State Electronics, 1991
- Charged carrier transport in Si1−xGex pseudomorphic alloys matched to Si—strain-related transport improvementsApplied Physics Letters, 1989