Resist line edge roughness and aerial image contrast
- 1 November 2001
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 19 (6) , 2890-2895
- https://doi.org/10.1116/1.1418413
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Sharpened carbon nanotube probesPublished by SPIE-Intl Soc Optical Eng ,2000
- Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Surface roughness development during photoresist dissolutionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Aerial image contrast using interferometric lithography: effect on line-edge roughnessPublished by SPIE-Intl Soc Optical Eng ,1999
- Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Process dependence of roughness in a positive-tone chemically amplified resistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998