Correlation between surface-state density and impact ionization phenomena in GaAs MESFET's
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (12) , 2682-2684
- https://doi.org/10.1109/16.158692
Abstract
GaAs MESFET's passivated with PECVD SiN show a lower surface-state density in comparison with SiO passivated devices, as deduced from g(m)(f) dispersion curves. Lower carrier multiplication due to impact ionization phenomena in the active channel and consequently a higher breakdown voltage are observed in SiO passivated samples. These effects are attributed to a lower peak electric field near the drain edge of the gate, deriving from an accumulation of negative surface chargeKeywords
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