Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A technique for preparing semiconductor cross sections for both TEM and SEM analysisProceedings, annual meeting, Electron Microscopy Society of America, 1989
- A Grinding/Polishing Tool for TEM Sample PreparationMRS Proceedings, 1987
- A Polishless Method For Preparation Of Cross-Sectional Tem SamplesMRS Proceedings, 1987
- The Use of Glass Slides for Preparing Cross-Section TEM Samples of Discrete TransistorsMRS Proceedings, 1987
- Lithographic fabrication of transmission electron microscopy cross sections in III–V materialsJournal of Vacuum Science & Technology B, 1986
- Contributions of Electron Microscopy to the Understanding of Reactions on Compound Semiconductor SurfacesMRS Proceedings, 1985
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984
- Advances in Transmission Electron Microscope Techniques Applied to Device Failure AnalysisJournal of the Electrochemical Society, 1980
- Cross-sectional specimens for transmission electron microscopyJournal of Applied Physics, 1974