NANO-phase SBT-family ferroelectric memories
- 1 September 1998
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 21 (1-4) , 1-14
- https://doi.org/10.1080/10584589808202046
Abstract
Recent studies have produced 0.1 × 0.1 μm ferroelectric cells in both bismuth titanate and strontium bismuth tantalate, thus taking thin-film ferroelectric memories into the regime of nanoscale (100 nm or less) devices. A review is presented of deposition, switching, and leakage current in these devices, which are small enough to permit 1 Gbit memories on a standard Si chip.Keywords
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