Determination of gap state density in polycrystalline silicon by field-effect conductance
- 20 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (16) , 1025-1027
- https://doi.org/10.1063/1.97460
Abstract
We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field-effect conductance. The DOS exhibits a U-shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post-hydrogenation).Keywords
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