Charge Collection in N-Type GaAs Schottky-Barrier Diodes Struck by Heavy Energetic Ions
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1570-1573
- https://doi.org/10.1109/TNS.1984.4333552
Abstract
Charge collection was measured as a function of reverse-bias voltage on GaAs Schottky-barrier diodes bombarded with heavy, energetic ions. Ion species included in the study were copper (57 MeV), chlorine (62 MeV), oxygen (18 MeV), and, to establish a baseline for comparisons, 241Am-decay alpha particles (5.4 MeV). Measurements of the drift component of collected charge are compared to funneling predictions based on the McLean-Oldham model. Results show that significant funneling occurs, in reasonable agreement with predictions for the lighter ions, but to a lesser extent than predicted for the heavier ions. Measurements at the higher biases show evidence of charge multiplication.Keywords
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