Evaluation of epitaxial n-GaAs for nuclear radiation detection
- 15 July 1971
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 94 (3) , 463-476
- https://doi.org/10.1016/0029-554x(71)90008-5
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n-GaAsApplied Physics Letters, 1970
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- Analysis of material inhomogeneities in semiconductor nuclear particle detectors using CdTeNuclear Instruments and Methods, 1970
- Nuclear Detectors from Cadmium Telluride Grown from a Tellurium SolventIEEE Transactions on Nuclear Science, 1970
- Electrical properties of bulk solution grown GaP and GaAs crystalsSolid-State Electronics, 1970
- On the CdTe DetectorsIEEE Transactions on Nuclear Science, 1968
- SEMICONDUCTOR NUCLEAR RADIATION DETECTORSAnnual Review of Nuclear Science, 1967
- CdTe as a gamma detectorNuclear Instruments and Methods, 1967
- Gallium arsenide surface barrier diode as charged particle spectrometerNuclear Instruments and Methods, 1966
- Gallium Arsenide for γ-Ray SpectroscopyNature, 1960