Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells

This publication has 28 references indexed in Scilit:

• High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers
  Applied Physics Letters, 1990
• A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier
  Applied Physics Letters, 1990
• Valence band engineering in strained-layer structures
  Semiconductor Science and Technology, 1989
• Highly Strained InAs_xP_l-X/InP Quantum wells Prepared by Flow Modulation Epitaxy
  MRS Proceedings, 1989
• Continuous operation of high-power (200 mW) strained-layer Ga _1−x In _x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
  Electronics Letters, 1988
• Band structure engineering of semiconductor lasers for optical communications
  Journal of Lightwave Technology, 1988
• InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range
  Applied Physics Letters, 1988
• Optical investigations of the band structure of strained InAs/AlInAs quantum wells
  Applied Physics Letters, 1988
• Band structure engineering for maximal light-hole behaviour in strained quantum well systems
  Solid State Communications, 1987
• Strained-Layer Superlattices and Strain-Induced Light Holes
  MRS Proceedings, 1984