Reverse Breakdown in In-Ge Alloy Junctions
- 1 November 1958
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 29 (11) , 1534-1537
- https://doi.org/10.1063/1.1722988
Abstract
Experimental information is presented which shows that abrupt p+n junctions break down by the Zener internal field emission effect when the base resistivity is low and by ionization avalanche when the base resistivity is high. In intermediate regions of base resistivity both mechanisms are observed in the same junction. The onset of Zener current is accompanied by a drop, of unexplained origin, in the junction collection efficiency for minority carriers photoinjected into the base. Applicability of the Zener theory to abrupt p+n junctions is discussed.This publication has 7 references indexed in Scilit:
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