Selective growth of InP in the low pressure hydride VPE system
- 1 December 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 1033-1036
- https://doi.org/10.1007/bf03030202
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- MOVPE growth of SiO2-masked InP structures at reduced pressuresJournal of Crystal Growth, 1986
- Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPEJournal of Crystal Growth, 1986
- Selective growth of InP buried structure by chloride vapor phase epitaxyApplied Physics Letters, 1986
- Selective Epitaxial Deposition of Gallium Arsenide in HolesJournal of the Electrochemical Society, 1966