Room-temperature electroluminescence from Si microdisks with Ge quantum dots
- 14 June 2010
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 18 (13) , 13945-13950
- https://doi.org/10.1364/oe.18.013945
Abstract
A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.Keywords
This publication has 12 references indexed in Scilit:
- Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal sourceOptics Express, 2008
- Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulatorJournal of Applied Physics, 2004
- Dynamics of stimulated emission in silicon nanocrystalsApplied Physics Letters, 2003
- Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substratesApplied Physics Letters, 2002
- Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor depositionApplied Physics Letters, 2000
- Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dotApplied Physics Letters, 1997
- Room-temperature electroluminescence from Er-doped crystalline SiApplied Physics Letters, 1994
- Gas-source molecular beam epitaxy and luminescence characterization of strained Si1−xGex/Si quantum wellsJournal of Crystal Growth, 1994
- Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100)Applied Physics Letters, 1993
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1992