Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates
- 29 July 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (5) , 817-819
- https://doi.org/10.1063/1.1496142
Abstract
SiGe microcavities with Ge dots were fabricated by employing strain-balanced SiGe/Si Bragg reflectors, and it was observed that photoluminescence from Ge dots embedded in the microcavity structure was significantly modulated due to the cavity effect. The characteristic luminescence of the microcavity was observed up to 200 K, and the thermal activation energy of the luminescence was largely improved compared with that of cavities with quantum wells.Keywords
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