Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates
- 23 July 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (4) , 476-478
- https://doi.org/10.1063/1.1385196
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatchJournal of Applied Physics, 1999
- Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operationApplied Physics Letters, 1998
- Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detectionApplied Physics Letters, 1998
- High-gain p-i-n infrared photosensors with Bragg reflectors on amorphous silicon–germanium alloyApplied Physics Letters, 1997
- Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasersApplied Physics Letters, 1996
- Determination of lattice parameters in the epitaxial AlSbGaSb system by high resolution X-ray diffractionJournal of Crystal Growth, 1996
- Strain compensated InAsP/InP/InGaP multiple quantum well for 1.5 μm wavelengthApplied Physics Letters, 1994
- Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopyApplied Physics Letters, 1993
- Ge0.2Si0.8/Si Bragg-reflector mirrors for optoelectronic device applicationsApplied Physics Letters, 1993
- Bragg reflector of GaAlAs/AlAs layers with wide bandwidth applicable to light emitting diodesJournal of Applied Physics, 1993