Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation
- 19 October 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (16) , 2263-2265
- https://doi.org/10.1063/1.121696
Abstract
The use of highly strained (−2.0%) In 0.83 Ga 0.17 As quantum wells for the detection of light to a wavelength of λ∼2.0 μm is reported. Crystal quality for a 50 period multiple quantum well (MQW) detector grown on InP substrates is maintained through strain compensation using tensile strained In 0.83 Ga 0.17 P barriers. Transmission electron microscopy and double crystal x-ray diffraction reveal smooth interfaces and no observable defects for In 0.83 Ga 0.17 As layers with widths less than 80 Å. Single-pass quantum efficiencies of 30% have been achieved at λ=1.95 μm, using a 75 μm diam MQW, strain-compensated, top illuminated, low dark current (∼250 pA at 20 V) p-i-n detector. The theoretical cutoff wavelength limit for diodes fabricated using this technique is calculated to be λ=2.15 μm.Keywords
This publication has 17 references indexed in Scilit:
- Progress in HgCdTe homojunction infrared detectorsJournal of Crystal Growth, 1998
- Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasersIEEE Photonics Technology Letters, 1998
- Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxyIEEE Transactions on Electron Devices, 1997
- 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxyApplied Physics Letters, 1997
- Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxyApplied Physics Letters, 1994
- Evaluation of low dark current InSb photovoltaic detectorsSolid-State Electronics, 1992
- GaInAsSb/GaSb pn photodiodes for detection to 2.4 μmElectronics Letters, 1991
- Room-Temperature InGaAs Detector Arrays For 2.5 µmPublished by SPIE-Intl Soc Optical Eng ,1990
- Strained-layer Ga1−xInxAs/InP avalanche photodetectorsApplied Physics Letters, 1988
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974