Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (1) , 42-44
- https://doi.org/10.1109/68.651096
Abstract
The demonstration of an optimized strain compensated multiple-quantum-well (MQW) active region for use in 1.3-/spl mu/m wavelength lasers is described. Utilizing narrow bandgap tensile-strained InGaAsP instead of wide bandgap InGaP barriers in strain-compensated lasers, we observe a reduction in threshold current density (Jth) from 675 to 310 A/cm/sup 2/ and in T/sub 0/ from 75 K to 65 K for 2-mm long seven quantum-well devices. Additionally, the lowest reported Jth for MBE grown 1.3-/spl mu/m wavelength lasers of 120 A/cm/sup 2/ for single-quantum-well (SQW) 45-mm-long lasers was attained.Keywords
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