Metalorganic molecular beam epitaxy of strained InAsPInGaAsP multi-quantum-wells for 1.3 μm wavelength laser diodes
- 2 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 147 (1-2) , 1-7
- https://doi.org/10.1016/0022-0248(94)00650-4
Abstract
No abstract availableKeywords
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