Solid source molecular beam epitaxy of low thresholdstrained layer 1.3 µm InAsP/GaInAsP lasers
- 29 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (18) , 1674-1675
- https://doi.org/10.1049/el:19961090
Abstract
A threshold current density of 270 A/cm2 has been achieved for 2 mm long broad area lasers grown by solid source molecular beam epitaxy. These are the lowest reported threshold current density 1.3 µm lasers by any type of MBE growth technique.Keywords
This publication has 3 references indexed in Scilit:
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- MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasersIEEE Journal of Quantum Electronics, 1994
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986