Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4R)
- https://doi.org/10.1143/jjap.25.652
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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