Polarization bistability in semiconductor lasers with intracavity multiple quantum well saturable absorbers
- 6 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 1958-1960
- https://doi.org/10.1063/1.105031
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Bistability in two-mode semiconductor lasers via gain saturationApplied Physics Letters, 1987
- Polarization bistability in external cavity semiconductor lasersApplied Physics Letters, 1987
- Voltage-controlled optical bistability associated with two-dimensional exciton in GaAs-AlGaAs multiple quantum well lasersApplied Physics Letters, 1986
- An experiment on high-speed optical time-division switchingJournal of Lightwave Technology, 1986
- Anistropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laserIEEE Journal of Quantum Electronics, 1985
- Polarization bistability in semiconductor lasersApplied Physics Letters, 1985
- Optoelectronic logic operations by cleaved-coupled-cavity semiconductor lasersIEEE Journal of Quantum Electronics, 1983
- Bistability and pulsations in semiconductor lasers with inhomogeneous current injectionIEEE Journal of Quantum Electronics, 1982
- Spectrum and polarization of hot-electron photoluminescence in semiconductorsSoviet Physics Uspekhi, 1982
- Bistable operation of semiconductor lasers by optical injectionElectronics Letters, 1981