Large-displacement vertical microlens scanner with low driving voltage
- 10 December 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (11) , 1572-1574
- https://doi.org/10.1109/lpt.2002.803331
Abstract
We have designed, fabricated, and demonstrated large vertical displacement vertical microlens scanners with low (<10 V) driving voltage using silicon-on-insulator technology. The unique isolated and pre-engaged vertical comb-drive sets and the coupled-torsion flexure design provide both upward and downward piston motions, as well as low driving voltages. Single-directional devices demonstrate maximum static downward displacement of 8 μm at 10 V/sub dc/. Bidirectional devices demonstrate vertical actuation from -6.5 to +9 μm at max 12 V/sub dc/, and a vertical displacement of up to 55 μm peak-to-peak is achieved at the resonance near 400 Hz. The lens motion shows piston motion with a small tilt angle of less than 0.034/spl deg/ and the compensation of the tilt using an isolated comb bank is demonstrated.Keywords
This publication has 6 references indexed in Scilit:
- Multilevel beam SOI-MEMS fabrication and applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Composing domain-specific design environmentsComputer, 2001
- Three-dimensional memoryPublished by SPIE-Intl Soc Optical Eng ,2000
- Electrostatic model for an asymmetric combdriveJournal of Microelectromechanical Systems, 2000
- Electrostatic comb drive for vertical actuationPublished by SPIE-Intl Soc Optical Eng ,1997
- Electrostatic-comb drive of lateral polysilicon resonatorsSensors and Actuators A: Physical, 1990