Fermi energy and Fermi-Dirac integrals for zincblende-symmetry narrow-gap semiconductors with spherical energy bands
- 20 May 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (14) , 2685-2694
- https://doi.org/10.1088/0022-3719/13/14/010
Abstract
Based on an analytical approximation (recently proposed by Joyce and Dixon) for the Fermi energy of an ideal Fermi gas, an expression for the Fermi energy of zincblende-symmetry narrow-gap semiconductors with spherical energy bands is derived. A formula for the Fermi-Dirac integral for such semiconductors is given and certain properties of the integral are discussed. As an additional study, the role of this Fermi-Dirac integral towards the convergence of the expansion of the screening charge density for impurity ions in semiconductors is described.Keywords
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