Plasma oxidation of silicon in a microwave discharge and its specificity
- 14 May 1979
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 12 (5) , L61-L63
- https://doi.org/10.1088/0022-3727/12/5/005
Abstract
Analyses conditions of oxide formation on silicon in a microwave plasma. Experimentally it is shown that oxide films can be created only in a plasma where the floating potential is close to zero or positive with respect to the grounded support of the Si sample.Keywords
This publication has 4 references indexed in Scilit:
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- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- Oxide Films Grown on GaAs in an Oxygen PlasmaJournal of Applied Physics, 1966
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965