A double InGaAs/InP HBT technology for lightwave communication circuits design
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Ultra-high-speed InP/InGaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1994