Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (3) , 94-96
- https://doi.org/10.1109/55.285391
Abstract
We report on the microwave performance of InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBT's) utilizing a carbon-doped base grown by chemical beam epitaxy (CBE). The f/sub T/ and f/sub max/ of the HBT having two 1.5/spl times/10 /spl mu/m/sup 2/ emitter fingers were 175 GHz and 70 GHz, respectively, at I/sub C/=40 mA and V/sub CE/=1.5 V. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. These results indicate the great potential of carbon-doped base InP/InGaAs HBT's for high-speed applications.Keywords
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