InGaAs/InP HBTs with a buried subcollector fabricated by selective epitaxy
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2657-2658
- https://doi.org/10.1109/16.163519
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Regrowth of In0.53Ga0.47As/InP p-n heterojunctions by organometallic chemical vapor depositionJournal of Applied Physics, 1991