Regrowth of In0.53Ga0.47As/InP p-n heterojunctions by organometallic chemical vapor deposition
- 1 October 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (7) , 3967-3969
- https://doi.org/10.1063/1.349159
Abstract
The quality of interfaces regrown by organometallic chemical vapor deposition is evaluated from the electrical characteristics of In0.53Ga0.47As/InP p‐n heterojunction diodes. The I‐V curves are undistinguishable from those of junctions obtained by continuous growth, with ideality factors η≊1.1 and no observable contribution from interface recombination in the measured current range. An upper limit of 200 cm/s is obtained for the interface recombination velocity. The results show that high‐quality interfaces can be obtained in spite of prior air exposure. The technique can be used for the realization of regrown heterojunction bipolar transistors.This publication has 9 references indexed in Scilit:
- Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowthJournal of Applied Physics, 1991
- Selective vapor-phase deposition on patterned substratesCritical Reviews in Solid State and Materials Sciences, 1990
- High-performance Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substratesElectronics Letters, 1989
- High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxyApplied Physics Letters, 1986
- An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Minority carrier lifetime and luminescence efficiency of 1.3 µm InGaAsP-InP double heterostructure layersIEEE Journal of Quantum Electronics, 1983
- Dark current reduction in AlxGa1−xAs-GaAs heterojunction diodesJournal of Applied Physics, 1981
- Interfacial recombination in GaAlAs–GaAs heterostructuresJournal of Vacuum Science and Technology, 1978
- Liquid-phase epitaxial growth of Ga1−xAlxAs on the side and top surfaces of air-exposed Ga1−yAlyAsApplied Physics Letters, 1976