Transient transport in central-valley-dominated ternary III–V alloys
- 1 July 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (7) , 725-734
- https://doi.org/10.1016/0038-1101(86)90158-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ballistic transport in GaAsIEEE Electron Device Letters, 1983
- On the physics and modeling of small semiconductor devices—IIISolid-State Electronics, 1980
- Negative resistance and peak velocity in the central (000) valley of III–V semiconductorsSolid-State Electronics, 1979
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970