On the physics and modeling of small semiconductor devices—III
- 1 June 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (6) , 545-549
- https://doi.org/10.1016/0038-1101(80)90035-0
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- On the physics and modeling of small semiconductor devices—IIISolid-State Electronics, 1980
- Balance equations for high field transport in the finite collision duration regimeSolid State Communications, 1979
- Transient velocity characteristics of electrons in GaAs with Γ-L-X conduction band orderingJournal of Applied Physics, 1978
- The transient response of quasi-two-dimensional semiconductors under hot electron conditionsSurface Science, 1978
- Calculation of hot electron phenomenaSolid-State Electronics, 1978
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972
- Time Response of the High-field Electron Distribution Function in GaAsIBM Journal of Research and Development, 1969
- Calculation of distribution functions by exploiting the stability of the steady stateJournal of Physics and Chemistry of Solids, 1969
- Quantum Theory of Electrical Transport PhenomenaPhysical Review B, 1957