Transient velocity characteristics of electrons in GaAs with Γ-L-X conduction band ordering

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Abstract
The transient velocity characteristics of electrons in GaAs have been calculated for uniform electric fields at room temperature. Three‐level band‐structure data have been used with a Monte Carlo simulation program to predict electron drift velocity, temperature, and valley population fractions as functions of position and electric field. Results for two three‐level band‐structure models are compared with those for the previously accepted two‐level model. Transient and steady‐state properties are seen to be sensitive to some material parameters whose values are still in dispute.