Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1R)
- https://doi.org/10.1143/jjap.33.83
Abstract
Plasma-induced damage of gate oxides is evaluated from the difference between the intrinsic charge-to-breakdown (Q BD) and the residual Q BD. This difference, ΔQ BD, corresponds to the plasma-induced damage to the oxide and to the accumulation of conduction current from the plasma into the oxide. It is shown experimentally that the plasma-induced damage ΔQ BD increases in proportion to the antenna ratio (exposed antenna area/gate area). The ΔQ BD of the antenna capacitor depends not on the device structures such as the gate oxide thickness, but on the plasma process conditions.Keywords
This publication has 2 references indexed in Scilit:
- Dependence of plasma-induced oxide charging current on Al antenna geometryIEEE Electron Device Letters, 1992
- Magnetron etching of polysilicon: Electrical damageJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991