Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Film Grown by Chemical Vapor Deposition

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Abstract
The surface conductive layer in a hydrogenated chemical vapor deposited diamond film was studied experimentally and analytically. The Hall effect measurement showed that the hole areal density at the surface introduced unintentionally was as high as 1013/ cm2, which was about an order of magnitude higher than that used in the conventional field-effect transistors. We have analyzed the surface band bending from the quantum-mechanical point of view to determine the equivalent Fermi level pinning position settled after hydrogenation. It was found that, at the surface, the Fermi level locates inside the valence band at a depth of 0.36 eV from the valence band edge.