Quantum Analysis of Hole Distribution in Multiple-Delta-Doped Diamond with a Deep Impurity Level
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8R)
- https://doi.org/10.1143/jjap.34.3987
Abstract
Multiple-delta-doping (MDD) in synthetic diamond films is studied analytically from the quantum-mechanical point of view by solving Schroedinger's and Poisson's equations simultaneously and self-consistently. From the analysis, a series of wave functions and subbands are determined, and more accurate distribution of holes than from the classical-mechanical point of view is obtained. In MDD diamond films at 500 K, in spite of the deep impurity level, hole excitation efficiency rises to 4–5 times that of uniformly doped films. Moreover, 95% of holes are located in the nondoped layer where the mobility is high. These two beneficial features of MDD markedly improve the conductance as compared with that of uniformly doped diamond films.Keywords
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